Selective formation of silicon carbon epitaxial layer

ABSTRACT

Methods for formation of epitaxial layers containing n-doped silicon are disclosed, including methods for the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. Formation of the n-doped epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second higher temperature and a higher pressure than during deposition.

BACKGROUND

Embodiments of the present invention generally relate to methods andapparatus for selective formation of epitaxial layers containing siliconand carbon. Specific embodiments pertain to methods and apparatus forthe selective formation of n-doped epitaxial layers in semiconductordevices, for example, Metal Oxide Semiconductor Field Effect Transistor(MOSFET) devices.

The amount of current that flows through the channel of a MOS transistoris directly proportional to a mobility of carriers in the channel, andthe use of high mobility MOS transistors enables more current to flowand consequently faster circuit performance. Mobility of the carriers inthe channel of an MOS transistor can be increased by producing amechanical stress in the channel. A channel under compressive strain,for example, a silicon-germanium channel layer grown on silicon, hassignificantly enhanced hole mobility to provide a pMOS transistor. Achannel under tensile strain, for example, a thin silicon channel layergrown on relaxed silicon-germanium, achieves significantly enhancedelectron mobility to provide an nMOS transistor.

An nMOS transistor channel under tensile strain can also be provided byforming one or more carbon-doped silicon epitaxial layers, which may becomplementary to the compressively strained SiGe channel in a pMOStransistor. Thus, carbon-doped silicon and silicon-germanium epitaxiallayers can be deposited on the source/drain of nMOS and pMOStransistors, respectively. The source and drain areas can be either flator recessed by selective Si dry etching. When properly fabricated, nMOSsources and drains covered with carbon-doped silicon epitaxy imposestensile stress in the channel and increases nMOS drive current.

To achieve enhanced electron mobility in the channel of nMOS transistorshaving a recessed source/drain using carbon-doped silicon epitaxy, it isdesirable to selectively form the carbon-doped silicon epitaxial layeron the source/drain either through selective deposition or bypost-deposition processing. Furthermore, it is desirable for thecarbon-doped silicon epitaxial layer to contain substitutional C atomsto induce tensile strain in the channel. Higher channel tensile straincan be achieved with increased substitutional C content in acarbon-doped silicon source and drain.

Generally, sub-100 nm CMOS (complementary metal-oxide semiconductor)devices require a junction depth to be less than 30 nm. Selectiveepitaxial deposition is often utilized to form epitaxial layers(“epilayers”) of silicon-containing materials (e.g., Si, SiGe and Si:C)into the junctions. Selective epitaxial deposition permits growth ofepilayers on silicon moats with no epitaxial growth on dielectric areas.Selective epitaxy can be used within semiconductor devices, such aselevated source/drains, source/drain extensions, contact plugs or baselayer deposition of bipolar devices.

A typical selective epitaxy process involves a deposition reaction andan etch reaction. During the deposition process, the epitaxial layer isformed on a monocrystalline surface while a layer of polycrystallineand/or amorphous material is deposited on at least a second layer, suchas an existing polycrystalline layer and/or an amorphous layer. Thedeposition and etch reactions occur simultaneously with relativelydifferent reaction rates to an epitaxial layer and to a polycrystallinelayer. However, the deposited polycrystalline/amorphous layer isgenerally etched at a faster rate than the epitaxial layer. Therefore,by changing the concentration of an etchant gas, the net selectiveprocess results in deposition of epitaxy material and limited, or no,deposition of polycrystalline material. For example, a selective epitaxyprocess may result in the formation of an epilayer of silicon-containingmaterial on a monocrystalline silicon surface while no deposition isleft on the spacer.

Selective epitaxy deposition of silicon-containing materials has becomea useful technique during formation of elevated source/drain andsource/drain extension features, for example, during the formation ofsilicon-containing MOSFET (metal oxide semiconductor field effecttransistor) devices. Source/drain extension features are manufactured byetching a silicon surface to make a recessed source/drain feature andsubsequently filling the etched surface with a selectively grownepilayers, such as a silicon germanium (SiGe) material. Selectiveepitaxy permits near complete dopant activation with in-situ doping, sothat the post annealing process is omitted. Therefore, junction depthcan be defined accurately by silicon etching and selective epitaxy. Onthe other hand, the ultra shallow source/drain junction inevitablyresults in increased series resistance. Also, junction consumptionduring silicide formation increases the series resistance even further.In order to compensate for junction consumption, an elevatedsource/drain is epitaxially and selectively grown on the junction.Typically, the elevated source/drain layer is undoped silicon.

However, current selective epitaxy processes have some drawbacks. Inorder to maintain selectivity during present epitaxy processes, chemicalconcentrations of the precursors, as well as reaction temperatures, mustbe regulated and adjusted throughout the deposition process. If notenough silicon precursor is administered, then the etching reaction maydominate and the overall process is slowed down. Also, harmfulover-etching of substrate features may occur. If insufficient etchantprecursor is administered, then the deposition reaction may dominate,reducing the selectivity to form monocrystalline and polycrystallinematerials across the substrate surface. Also, current selective epitaxyprocesses usually require a high reaction temperature, such as about800° C., 1,000° C. or higher. Such high temperatures are not desirableduring a fabrication process due to thermal budget considerations andpossible uncontrolled nitridation reactions to the substrate surface. Inaddition, most of the C atoms incorporated through typical selectiveSi:C epitaxy processes at the higher process temperatures occupynon-substitutional (i.e. interstitial) sites of the Si lattice. Bylowering growth temperature, a higher fraction of substitutional carbonlevel can be achieved (e.g. nearly 100% at growth temperature of 550°C.), however, the slow growth rate at these lower temperatures isundesirable for device applications, and such selective processing mightnot be possible at the lower temperatures.

The manufacturing conditions for silicon carbon epitaxy may be differentfor epitaxy having different dopants and dopant concentrations. Theincorporation of high levels of dopants (e.g. greater than 10²⁰atoms/cm³) into the Si:C epitaxy during deposition is of interest,because the incorporation of high levels of dopants during depositionreduces the need to increase the dopant level using subsequentprocedures such as ion implantation. Taking into consideration the widearray of variables in an epitaxial manufacturing process including, butnot limited to, temperature, carrier gas type, deposition gas type,etching gas type, flow rates for each of the etching, deposition andcarrier gases and chamber pressure, the selection and optimization ofspecific variables for a particular epitaxy having a specific dopant anddopant concentration can be unpredictable. Thus, the incorporation ofhigh levels of dopants into the Si:C epitaxy may require changing alarge number of variables to achieve high quality epitaxy. It would bedesirable to provide process for forming heavily n-doped Si:C epitaxy.Such methods would be useful in the manufacture of transistor devices.

SUMMARY

One embodiment of the present invention relates to methods of formingand processing epitaxial layers containing silicon. Other embodimentsrelate to methods manufacturing of fabricating transistor devicesincluding epitaxial layers containing silicon and carbon.

In accordance with one embodiment of the present invention, a method forepitaxially forming a silicon-carbon film on a substrate surface,comprises placing a substrate including a monocrystalline surface andsecondary surfaces into a process chamber; exposing the substrate todeposition gases comprising a silicon source, a carbon source and ann-type dopant at a temperature of less than about 600° C. and adeposition pressure; and exposing the substrate to an etching gascomprising hydrogen chloride at a temperature exceeding about 600° C.and at a pressure at least about 10 times the pressure during exposureto the deposition gas, the method resulting in selective deposition ofheavily doped n-type epitaxy on the monocrystalline surface.

In one embodiment, the dopant comprises a phosphorus source, forexample, phosphine. In other embodiments, the dopant comprises anarsenic source, for example arsine. The dopant may comprise acombination of arsine and phosphine. In one embodiment, the etching gascomprises only hydrogen chloride. The hydrogen chloride may be deliveredto the chamber from a hydrogen chloride source gas. Alternatively, thehydrogen chloride may be formed in the chamber upon mixing hydrogen andchlorine source gases in the chamber.

In one embodiment, the dopant level is at least about 2× than 10²⁰atoms/cm³. According to one embodiment, the temperature duringdeposition is in the range of about 575° C. and below about 600° C. Inone embodiment, the temperature during etching is in the range of aboveabout 600° C. and below about 650° C.

Another embodiment includes flowing dichlorosilane during deposition. Inanother embodiment, hydrogen chloride is flowed during deposition. In anembodiment of the invention, the epitaxial film is formed during afabrication step of a transistor manufacturing process, and the methodfurther comprises: forming a gate dielectric on a substrate; forming agate electrode on the gate dielectric; and forming source/drain regionson the substrate on opposite sides of the electrode and defining achannel region between the source/drain regions.

The foregoing has outlined rather broadly certain features and technicaladvantages of the present invention. It should be appreciated by thoseskilled in the art that the specific embodiments disclosed may bereadily utilized as a basis for modifying or designing other structuresor processes within the scope of the present invention. It should alsobe realized by those skilled in the art that such equivalentconstructions do not depart from the spirit and scope of the inventionas set forth in the appended claims.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentinvention can be understood in detail, a more particular description ofthe invention, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this invention and are therefore not to beconsidered limiting of its scope, for the invention may admit to otherequally effective embodiments.

FIG. 1 is a cross-sectional view of a field effect transistor pair inaccordance with an embodiment of the invention; and

FIG. 2 is a cross-sectional view of the NMOS field effect transistorshown in FIG. 1 having additional layers formed on the device.

DETAILED DESCRIPTION

Embodiments of the invention generally provide methods and apparatus forforming and treating a silicon-containing epitaxial layer. Specificembodiments pertain to methods and apparatus for forming and treating anepitaxial layer during the manufacture of a transistor.

As used herein, epitaxial deposition refers to the deposition of asingle crystal layer on a substrate, so that the crystal structure ofthe deposited layer matches the crystal structure of the substrate.Thus, an epitaxial layer or film is a single crystal layer or filmhaving a crystal structure that matches the crystal structure of thesubstrate. Epitaxial layers are distinguished from bulk substrates andpolysilicon layers.

Throughout the application, the terms “silicon-containing” materials,compounds, films or layers should be construed to include a compositioncontaining at least silicon and may contain germanium, carbon, boron,arsenic, phosphorus gallium and/or aluminum. Other elements, such asmetals, halogens or hydrogen may be incorporated within asilicon-containing material, compound, film or layer, usually in partper million (ppm) concentrations. Compounds or alloys ofsilicon-containing materials may be represented by an abbreviation, suchas Si for silicon, SiGe for silicon germanium, Si:C for silicon carbonand SiGeC for silicon germanium carbon. The abbreviations do notrepresent chemical equations with stoichiometrical relationships, norrepresent any particular reduction/oxidation state of thesilicon-containing materials.

One or more embodiments of the invention generally provide processes toselectively and epitaxially deposit silicon-containing materials onmonocrystalline surfaces of a substrate during fabrication of electronicdevices. A substrate containing a monocrystalline surface (e.g., siliconor silicon germanium) and at least a secondary surface, such as anamorphous surface and/or a polycrystalline surface (e.g., oxide ornitride), is exposed to an epitaxial process to form an epitaxial layeron the monocrystalline surface while forming limited or nopolycrystalline layer on the secondary surfaces. The epitaxial processtypically includes repeating a cycle of a deposition process and anetching process until the desired thickness of an epitaxial layer isgrown. Exemplary alternating deposition and etch processes are disclosedin commonly assigned and copending U.S. patent application Ser. No.11/001,774, published as United States Patent Application PublicationNo. 2006/0115934, entitled, Selective Epitaxy Process With AlternatingGas Supply, the entire content of which is incorporated herein byreference.

In one or more embodiments, the deposition process includes exposing thesubstrate surface to a deposition gas containing at least a siliconsource and a carrier gas. The deposition gas may also include agermanium source and/or carbon source, as well as a dopant source. Inparticular embodiments, the deposition gas contains a sufficient amountof an n-type dopant precursor that results in the in the epitaxial filmcontaining at least about 1×10²⁰ atoms/cm³ of an n-type dopant. Inspecific embodiments, the final epitaxial film contains at least about2×10²⁰ atoms/cm³ of an n-type dopant, and more specifically, at leastabout 5×10²⁰ atoms/cm³ of an n-type dopant. As used herein, these levelsof dopant concentration will be referred to as heavily doped with ann-type dopant. Examples of suitable n-type dopants include P, As and Sb.During the deposition process, an epitaxial layer is formed on themonocrystalline surface of the substrate, while apolycrystalline/amorphous layer is formed on secondary surfaces, such asdielectric, amorphous and/or polycrystalline surfaces, which will becollectively referred to as “secondary surfaces”. Subsequently, thesubstrate is exposed to an etching gas. Typically, the etching gasincludes a carrier gas and an etchant, such as chlorine gas or hydrogenchloride. However, according to one or more embodiments, applicantsdetermined that effective etching of heavily doped n-type films can beetched only with hydrogen chloride, and not with chlorine gas. Theetching gas removes silicon-containing materials deposited during thedeposition process. During the etching process, thepolycrystalline/amorphous layer is removed at a faster rate than theepitaxial layer. Therefore, the net result of the deposition and etchingprocesses forms epitaxially grown silicon-containing material onmonocrystalline surfaces while minimizing growth, if any, ofpolycrystalline/amorphous silicon-containing material on the secondarysurfaces. A cycle of the deposition and etching processes may berepeated as needed to obtain the desired thickness of silicon-containingmaterials. The silicon-containing materials which can be deposited byembodiments of the invention include silicon, silicon germanium, siliconcarbon, silicon germanium carbon, and variants thereof, includingdopants.

In one example of the process, use of HCl gas as an etchant results insufficient removal of the polycrystalline/amorphous silicon-containingmaterial on the secondary surfaces for heavily n-doped epitaxy. Ingeneral, deposition processes may be conducted at lower temperaturesthan etching reactions, since etchants often need a high temperature tobe activated. According to one or more embodiments, it has beendetermined that by ramping the pressure after deposition by at leastabout 10 times the deposition pressure, and in specific embodiments,more than about 20 times the deposition pressure, and in more specificembodiments more than about 30 times the deposition pressure, effectiveetching can occur at temperatures above about 600° C. and below about650° C. for heavily doped n-type epitaxy.

Nitrogen is typically a preferred carrier gas due to cost considerationsassociated with the use of argon and helium as a carrier gas. Despitethe fact that nitrogen is generally much less expensive than argon,according to one or more embodiments of the invention, argon is apreferred carrier gas, particularly in embodiments in which methylsilaneis a silicon source gas. One drawback that may occur from using nitrogenas a carrier gas is the nitridizing of materials on a substrate duringdeposition processes. However, high temperature, such as over 800° C.,is required to activate nitrogen in such a manner. Therefore, accordingto one or more embodiments, nitrogen can be used as an inert carrier gasin processes conducted at temperatures below the nitrogen activationthreshold. The use of an inert carrier gas has several attributes duringa deposition process. For one, an inert carrier gas may increase thedeposition rate of the silicon-containing material. While hydrogen maybe used as a carrier gas, during the deposition process, hydrogen has atendency to adsorb or react to the substrate to form hydrogen-terminatedsurfaces. A hydrogen-terminated surface reacts much slower to epitaxialgrowth than a bare silicon surface. Therefore, the use of an inertcarrier gas increases the deposition rate by not adversely effecting thedeposition reaction.

According to a first embodiment of the invention, blanket ornonselective epitaxy with alternating steps of deposition and purgeresults in improved crystallinity of epitaxial films grown using ahigher order silane compared to continuous deposition. As used herein,“higher order silane” refers to a disilane or higher silane precursor.In certain specific embodiments, “higher order silane” refers todisilane, neopentasilane (NPS), or a mixture of these. An exemplaryprocess includes loading a substrate into a process chamber andadjusting the conditions within the process chamber to a desiredtemperature and pressure. Then, a deposition process is initiated toform an epitaxial layer on a monocrystalline surface of the substrate.The deposition process is then terminated. The thickness of theepitaxial layer is then determined. If the predetermined thickness ofthe epitaxial layer is achieved, then the epitaxial process isterminated. However, if the predetermined thickness is not achieved,then steps of deposition and purge are repeated as a cycle until thepredetermined thickness is achieved. Further details of this exemplaryprocess are described below.

The substrates may be unpatterned or patterned. Patterned substrates aresubstrates that include electronic features formed into or onto thesubstrate surface. The patterned substrate usually containsmonocrystalline surfaces and at least one secondary surface that isnon-monocrystalline, such as a dielectric, polycrystalline or amorphoussurfaces. Monocrystalline surfaces include the bare crystallinesubstrate or a deposited single crystal layer usually made from amaterial such as silicon, silicon germanium or silicon carbon.Polycrystalline or amorphous surfaces may include dielectric materials,such as oxides or nitrides, specifically silicon oxide or siliconnitride, as well as amorphous silicon surfaces.

After loading a substrate into the process chamber, the conditions inthe process chamber are adjusted to a predetermined temperature andpressure. The temperature is tailored to the particular conductedprocess. Generally, the process chamber is maintained at a temperaturebelow about 600° C. during deposition and above about 600° C. duringetching. The appropriate temperature to conduct epitaxial process maydepend on the particular precursors used to deposit thesilicon-containing. In one example, it has been found that hydrogenchloride (HCl) gas works well as an etchant for heavily n-dopedsilicon-containing materials, particularly when the pressure has beenincreased at least about 10 times the pressure used during deposition.

The process chamber is usually maintained at a pressure from about 0.1Torr to 50 Torr during deposition. In one embodiment, the depositionpressure is maintained at about 10 Torr. The pressure may fluctuateduring and between process steps, but is generally maintained constant.During etching, the pressure in the chamber is ramped up to at leastabout 10 times the pressure used during deposition.

During the deposition process the substrate is exposed to a depositiongas to form an epitaxial layer. The substrate is exposed to thedeposition gas for a period of time of about 0.5 seconds to about 30seconds, for example, from about 1 second to about 20 seconds, and morespecifically from about 5 seconds to about 10 seconds. In a specificembodiment, the deposition step lasts for about 10 to 11 seconds. Thespecific exposure time of the deposition process is determined inrelation to the exposure time during a subsequent etching process, aswell as particular precursors and temperature used in the process.Generally, the substrate is exposed to the deposition gas long enough toform a maximized thickness of an epitaxial layer

In one or more embodiments, the deposition gas contains at least asilicon source and a carrier gas, and may contain at least one secondaryelemental source, such as a carbon source and/or a germanium source.Also, the deposition gas may further include a dopant compound toprovide a source of a dopant, such as boron, arsenic, phosphorus,gallium and/or aluminum. In an alternative embodiment, the depositiongas may include at least one etchant, such as hydrogen chloride. Thehydrogen chloride may be delivered as hydrogen chloride gas or asseparate hydrogen and chlorine gases that are reacted in the chamber toform HCl.

The silicon source is usually provided into the process chamber at arate in a range from about 5 sccm to about 500 sccm, preferably fromabout 10 sccm to about 300 sccm, and more preferably from about 50 sccmto about 200 sccm, for example, about 100 sccm. In a specificembodiment, silane is flowed at about 60 sccm. Silicon sources useful inthe deposition gas to deposit silicon-containing compounds includesilanes, halogenated silanes and organosilanes. Silanes include silane(SiH₄) and higher silanes with the empirical formula Si_(x)H_((2x+2)),such as disilane (Si₂H₆), trisilane (Si₃H₈), tetrasilane (Si₄H₁₀), andneopentasilane, as well as others. Halogenated silanes include compoundswith the empirical formula X′_(y)Si_(x)H_((2x+2−y)), where X′=F, Cl, Bror I, such as hexachlorodisilane (Si₂Cl₆), tetrachlorosilane (SiCl₄),dichlorosilane (Cl₂SiH₂) and trichlorosilane (Cl₃SiH). Organosilanesinclude compounds with the empirical formula R_(y)Si_(x)H_((2x+2−y)),where R=methyl, ethyl, propyl or butyl, such as methylsilane((CH₃)SiH₃), dimethylsilane ((CH₃)₂SiH₂), ethylsilane ((CH₃CH₂)SiH₃),methyldisilane ((CH₃)Si₂H₅), dimethyldisilane ((CH₃)₂Si₂H₄) andhexamethyldisilane ((CH₃)₆Si₂). Organosilane compounds have been foundto be advantageous silicon sources as well as carbon sources inembodiments which incorporate carbon in the deposited silicon-containingcompound. According to one or more embodiments, methylsilane in anargon-containing carrier gas is a preferred silicon-containing sourceand carrier gas combination.

The silicon source is usually provided into the process chamber alongwith a carrier gas. The carrier gas has a flow rate from about 1 slm(standard liters per minute) to about 100 slm, for example, from about 5slm to about 75 slm, and more specifically from about 10 slm to about 50slm, for example, about 10 slm. Carrier gases may include nitrogen (N₂),hydrogen (H₂), argon, helium and combinations thereof. An inert carriergas is preferred and includes nitrogen, argon, helium and combinationsthereof. A carrier gas may be selected based on the precursor(s) usedand/or the process temperature during the epitaxial process. Usually thecarrier gas is the same throughout for each of the deposition andetching steps. However, some embodiments may use different carrier gasesin particular steps.

Typically, nitrogen is utilized as a carrier gas in embodimentsfeaturing low temperature (e.g., <800° C.) processes. Low temperatureprocesses are accessible due in part to the use of chlorine gas in theetching process. Nitrogen remains inert during low temperaturedeposition processes. Therefore, nitrogen is not incorporated into thedeposited silicon-containing material during low temperature processes.Also, a nitrogen carrier gas does not form hydrogen-terminated surfacesas does a hydrogen carrier gas. The hydrogen-terminated surfaces formedby the adsorption of hydrogen carrier gas on the substrate surfaceinhibit the growth rate of silicon-containing layers. Finally, the lowtemperature processes may take economic advantage of nitrogen as acarrier gas, since nitrogen is far less expensive than hydrogen, argonor helium. Despite the economic advantages, according to certainembodiments, argon is a preferred carrier gas.

The deposition gas used also contains at least one secondary elementalsource, such as a carbon source and/or a germanium source. A carbonsource may be added during deposition to the process chamber with thesilicon source and carrier gas to form a silicon-containing compound,such as a silicon carbon material. A carbon source is usually providedinto the process chamber at a rate in the range from about 0.1 sccm toabout 40 sccm, for example, from about 3 sccm to about 25 sccm, and morespecifically, from about 5 sccm to about 25 sccm, for example, about 10sccm. The carbon source may be 5% diluted in argon or nitrogen gas andflowed at a rate of 750 sccm. Carbon sources useful to depositsilicon-containing compounds include organosilanes, alkyls, alkenes andalkynes of ethyl, propyl and butyl. Such carbon sources includemethylsilane (CH₃SiH₃), dimethylsilane ((CH₃)₂SiH₂), ethylsilane(CH₃CH₂SiH₃), methane (CH₄), ethylene (C₂H4), ethyne (C₂H₂), propane(C₃H₈), propene (C₃H₆), butyne (C₄H₆), as well as others. The carbonconcentration of an epitaxial layer is in the range from about 200 ppmto about 5 atomic %, preferably from about 1 atomic % to about 3 atomic%, for example 1.5 atomic %. In one embodiment, the carbon concentrationmay be graded within an epitaxial layer, preferably graded with a lowercarbon concentration in the initial portion of the epitaxial layer thanin the final portion of the epitaxial layer. Alternatively, a germaniumsource and a carbon source may both be added during deposition into theprocess chamber with the silicon source and carrier gas to form asilicon-containing compound, such as a silicon carbon or silicongermanium carbon material.

Alternatively, a germanium source may be added to the process chamberwith the silicon source and carrier gas to form a silicon-containingcompound, such as a silicon germanium material. The germanium source isusually provided into the process chamber at a rate in the range fromabout 0.1 sccm to about 20 sccm, preferably from about 0.5 sccm to about10 sccm, and more preferably from about 1 sccm to about 5 sccm, forexample, about 2 sccm. Germanium sources useful to depositsilicon-containing compounds include germane (GeH₄), higher germanes andorganogermanes. Higher germanes include compounds with the empiricalformula Ge_(x)H_((2x+2)), such as digermane (Ge₂H₆), trigermane (Ge₃H₈)and tetragermane (Ge₄H₁₀), as well as others. Organogermanes includecompounds such as methylgermane ((CH₃)GeH₃), dimethylgermane((CH₃)₂GeH₂), ethylgermane ((CH₃CH₂)GeH₃), methyldigermane ((CH₃)Ge₂H₅),dimethyldigermane ((CH₃)₂Ge₂H₄) and hexamethyldigermane ((CH₃)₆Ge₂).Germanes and organogermane compounds have been found to be advantageousgermanium sources and carbon sources in embodiments while incorporatinggermanium and carbon into the deposited silicon-containing compounds,namely SiGe and SiGeC compounds. The germanium concentration in theepitaxial layer is in the range from about 1 atomic % to about 30 atomic%, for example, about 20 atomic %. The germanium concentration may begraded within an epitaxial layer, preferably graded with a highergermanium concentration in the lower portion of the epitaxial layer thanin the upper portion of the epitaxial layer.

The deposition gas used during deposition may further include at leastone dopant compound to provide a source of elemental dopant, such asboron, arsenic, phosphorus, gallium or aluminum. Dopants provide thedeposited silicon-containing compounds with various conductivecharacteristics, such as directional electron flow in a controlled anddesired pathway required by the electronic device. Films of thesilicon-containing compounds are doped with particular dopants toachieve the desired conductive characteristic. In one example, thesilicon-containing compound is doped n-type, such as with phosphorus,antimony and/or arsenic to a concentration in the range from about 10²⁰atoms/cm³ to about 10²¹ atoms/cm³. In specific embodiments, the dopantlevel exceeds about 2×10²⁰ atoms/cm³.

A dopant source is usually provided into the process chamber duringdeposition at a rate in the range from about 0.1 sccm to about 20 sccm,for example, from about 0.5 sccm to about 10 sccm, and more specificallyfrom about 1 sccm to about 5 sccm, for example, about 3 sccm. Dopantsmay also include arsine (AsH₃), phosphine (PH₃) and alkylphosphines,such as with the empirical formula R_(x)PH_((3−x)), where R=methyl,ethyl, propyl or butyl and x=1, 2 or 3. Alkylphosphines includetrimethylphosphine ((CH₃).sub.3P), dimethylphosphine ((CH₃)₂PH),triethylphosphine ((CH₃CH₂).sub.3P) and diethylphosphine ((CH₃CH₂)₂PH).Aluminum and gallium dopant sources may include alkylated and/orhalogenated derivates, such as described with the empirical formulaR_(x)MX_((3−x)), where M=Al or Ga, R=methyl, ethyl, propyl or butyl,X=Cl or F and x=0, 1, 2 or 3. Examples of aluminum and gallium dopantsources include trimethylaluminum (Me₃Al), triethylaluminum (Et₃Al),dimethylaluminumchloride (Me₂AlCl), aluminum chloride (AlCl₃),trimethylgallium (Me₃Ga), triethylgallium (Et₃Ga),dimethylgalliumchloride (Me₂GaCl) and gallium chloride (GaCl₃).

According to one or more embodiments, after the deposition process isterminated, the process chamber may be flushed with a purge gas or thecarrier gas and/or the process chamber may be evacuated with a vacuumpump. The purging and/or evacuating processes remove excess depositiongas, reaction by-products and other contaminants. In an exemplaryembodiment, the process chamber may be purged for about 10 seconds byflowing a carrier gas at about 5 slm. A cycle of deposition and purgemay be repeated for numerous cycles. In one embodiment, the depositionand purge cycle is repeated about 90 times.

In another aspect of the present invention, a blanket or non-selectivedeposition is performed at low temperatures, for example, below about600° C. and lower, using a higher order silane (e.g. disilane andhigher) source. This assists in amorphous growth (rather thanpolycrystalline) on dielectric surfaces such as oxide and nitride duringthe deposition step (nonselective deposition), which facilitates removalof the layer on dielectric surfaces by a subsequent etch step andminimizes damage on single crystalline layer grown on the crystallinesubstrate.

The use of neopentasilane in the formation of epitaxial films onsubstrates is described in commonly assigned U.S. application Ser. No.10/688,797, published as United States Patent Application PublicationNo. 2004/0224089, entitled Silicon-Containing Layer Deposition withSilicon Compounds, the entire content of which is incorporated herein byreference. Neopentasilane, ((SiH₃)₄Si), is a tertiary silane containingfour silyl (—SiH₃) groups bonded to a silicon atom. The use of higherorder silanes enables higher deposition rate at lower temperature andfor silicon-containing films incorporating carbon, higher incorporationof substitutional carbon atoms than the use of mono-silane as a siliconsource gas. In blanket deposition experiments conducted comparing silaneas silicon a silicon source gases at a process temperature of 600° C.and using nitrogen as a carrier gas and methylsilane (1% diluted inhydrogen) as a silicon-carbon source, 50% of the carbon wassubstitutional carbon in the deposited films. However, with the higherorder silanes, disilane produced films having greater than about 90%substitutional carbon and neopentasilane produced films having nearly100% substitutional carbon.

In one or more embodiments, a liquid source cabinet that includes aneopentasilane ampoule installed in close proximity to the processchamber, for example, within less than about five feet, morespecifically less than about two or three feet of the process chamber,enables higher delivery rate of the silicon source and consequentlyhigher deposition rate.

Thus, embodiments of the present invention provide selective epitaxyprocesses for silicon-containing films, for example, Si:C films withhigh substitutional carbon concentration (>1%), which can be used forforming tensile strained channel of N-type MOSFET structure whenepitaxial films are grown on recessed source/drain of a transistor. Ingeneral, it is difficult to achieve both of high substitutional carbonconcentration (>1%) in Si:C epitaxy and selective growth with smoothmorphology due to low temperature process required for highsubstitutional carbon concentration. According to one or moreembodiments of the invention, both are achieved.

Another aspect of the invention pertains to methods for in situphosphorus doping and selective epitaxial deposition of Si:C films: Ingeneral, in situ phosphorus doping during silicon deposition decreasesgrowth rate and increases the etch rate of a crystalline film,therefore, it makes it difficult to achieve selectivity. In other words,it is difficult to achieve crystalline growth on crystalline surfaces ofthe substrate without any growth on dielectric surfaces. Also, in situphosphorus doping tends to degrade crystallinity of epitaxial films.

According to one or more embodiments, the methods follow a sequentialorder, however, the process is not limited to the exact steps describedherein. For example, other process steps can be inserted between stepsas long as the order of process sequence is maintained. The individualsteps of an epitaxial deposition will now be described according to oneor more embodiments.

During experimentation, Cl₂ etchant gas was found to be very aggressiveon n-type doped silicon at temperatures of about 600° C., which limitedits capability to use on highly n-type doped substrates and on highlyn-type doped silicon carbon films. According to embodiments of theinvention, heavily P doped silicon carbon was deposited at lowtemperatures of less than about 600° C. During etching the temperatureand pressure were ramped up and using >1 slm HCl flow to obtainreasonable etch rate and selectivity. An extremely high doping level ofgreater than 5×10²⁰ atoms/cm³ P, with substitutional carbon levelexceeding about 1.5% was achieved. Normally, such high levels of dopingrequire ion implantation.

In one example, neo-pentasilane, silane, methylsilane and PH₃ were mixedand delivered to chamber, and non-selectively deposited on a substrateat 575° C. and 10 torr. During etching, the temperature was ramped up to625° C. and pressure was ramped approximately 30 times the depositionpressure to 300 torr. HCl was flowed at 18 slm HCl during etching toetch the amorphous films deposited on dielectric surfaces. At least a3:1 etch rate selectivity was achieved between amorphous films toepitaxial films. The procedure was repeated until a selective highly Pdoped silicon carbon with desired thickness of about 500-900 Angstromswas obtained on the open silicon area. Defect free silicon carbonepitaxy with >1.3% carbon, 95% substitutionality and a phosphorus dopinglevel exceeding 3×10²⁰ atoms/cm³ was obtained.

In another example, 50 sccm of disilane, 150 sccm of silane and 200 sccmof 5% methylsilane in Argon, 60 sccm of dichlorosilane (DCS) and 225sccm of 1% PH₃ in H₂ were mixed and delivered to the chamber with 5 slmN₂ carrier gas during non-selective deposition. Non-selective depositionwas performed on a substrate at a pressure of 10 torr for 11 seconds.During etching, the temperature was ramped up to 625° C. and thepressure was ramped to 300 torr. During etching, 18 slm HCl was used toetch the amorphous films deposited on dielectric surfaces. Defect freesilicon carbon epitaxy was obtained after about 30 seconds of etching.With 20 cycles, a thickness of 550 Angstroms of selective silicon carboncontaining about 1.4% carbon, with greater than about 90%substitutionality and greater than about 5.2×10²⁰ atoms/cm³ P dopant wasobtained on an unpatterned substrate. Repeating the same recipe on apatterned substrate resulted in a defect-free film having similarproperties and a thickness 850 Angstroms.

Additional experimentation revealed that temperatures exceeding 600° C.and pressures exceeding about 10 times the deposition pressure or 100torr is sufficient to effectively etch the amorphous material with HClduring etching. In prior work, disilane was not considered to besuitable for P doped silicon carbon application by due to the lowprocess temperatures required. At such low temperatures, disilane wasbelieved to be unable to provide a sufficient deposition rate. However,in our experiments, deposition rates exceeding about 600 Angstroms/minwere achieved. The addition of dichlorosiliane or HCl during depositionwas observed to help selectivity, as disclosed in U.S. patentapplication Ser. No. 11/227,874, published as United States PatentApplication Publication No. US2006/0115933. In addition, it was observedthat a high flow of disilane and additive of dichlorosilane/HCl mighthelp the positive loading on patterned substrates, resulting in athicker epitaxial layer on the crystalline portions of the substrate.

One or more embodiments of the present invention provide methods thatare particularly useful in forming complementary metal oxidesemiconductor (CMOS) integrated-circuit devices and will be described inthat context. Other devices and applications are also within the scopeof the invention. FIG. 1 illustrates portions of a cross sectional viewof a FET pair in a typical CMOS device. Device 100 comprises asemiconductor substrate after forming wells to provide source/drainregions, gate dielectric, and gate electrode of an NMOS device and PMOSdevice. The device 100 can be formed using conventional semiconductorprocesses such as growing single crystal silicon and formation ofshallow trench isolation structures by trench etching and growing ordepositing dielectric in the trench openings. Detailed procedures forforming these various structures are known in the art and are notdescribed further herein.

Device 100 comprises a semiconductor substrate 155, for example, asilicon substrate, doped with a p-type material, a p-type epitaxialsilicon layer 165 on substrate 155, a p-type well region 120 and ann-type well region 150 defined in epitaxial layer 165, an n-typetransistor (NMOS FET) 110 defined in p-well 120 and a p-type transistor(PMOS FET) 140 defined in n-well 150. First isolation region 158electrically isolates NMOS 110 and PMOS 140 transistors, and secondisolation region 160 electrically isolates the pair of transistors 110and 140 from other semiconductor devices on substrate 155.

According to one or more embodiments of the invention, NMOS transistor110 comprises a gate electrode 122, first source region 114 and a drainregion 116. The thickness of the NMOS gate electrode 122 is scalable andmay be adjusted based on considerations related to device performance.NMOS gate electrode 122 has a work function corresponding to the workfunction of a N-type device. The source and drain regions are n-typeregions on opposite sides of the gate electrode 122. Channel region 118is interposed between source region 114 and drain region 116. A gatedielectric layer 112 separates channel region 118 and gate electrode122. Processes for forming the NMOS gate electrode 122 and dielectriclayer are known in the art and are not discussed further herein.

According to one or more embodiments, PMOS transistor 140 comprises agate electrode 152, a source region 144 and a drain region 146. Thethickness of the PMOS gate electrode 152 is scalable and may be adjustedbased on considerations related to device performance. PMOS gateelectrode 152 has a work function corresponding to the work function ofa N-type device. The source and drain regions are p-type regions onopposite sides of gate electrode 152. Channel region 148 is interposedbetween source region 144 and drain region 146. A gate dielectric 142separates channel region 148 and gate electrode 152. Dielectric 142electrically insulates gate electrode 152 from channel region 148. Itwill be appreciated that the structures of the transistors 110 and 140shown in FIG. 2 and described immediately above are exemplary only, andvarious variants in materials, layers, etc. are within the scope of thepresent invention.

Referring now to FIG. 2, which shows a view of additional details of theNMOS device 110 of FIG. 5 after formation of spacers, layers over thesource/drain regions, for example, silicide layers, and formation of theetch stop 191. It will be appreciated that the PMOS device shown in FIG.6 may contain similar spacers and layers that may be tailored indimensions and/or composition to affect the stress induced in thechannel of the NMOS device as will be described further below. However,for illustration purposes, only NMOS device is shown and described indetail.

FIG. 2 shows spacers 175 that may be formed from suitable dielectricmaterial incorporated around the gate 119 including gate electrode 121.Offset spacers 177 may also be provided, which surround each of thespacers 175. Processes for forming shapes, sizes, and thickness ofspacers 175 and 177 are known in the art and are not further describedherein. A metal silicide layer 179 may be formed over the source region114 and drain region 116. The silicide layer 179 may be formed from asuitable metal such as nickel, titanium, or cobalt by any suitableprocess such as sputtering or PVD (Physical Vapor Deposition). Thesilicide layer 179 may diffuse into portions of the underlying surfaces.Elevation of the drain region 116 is shown by the arrow 181, which isshown as the distance from the substrate surface 180 to the top of thesilicide layer 179. Facet 183 of source drain region is shown as theangled surface As will be understood by the skilled artisan, theexemplary device described above may be modified to include asource/drain or source/drain extension having a Si:C epitaxial layerthat may be further modified according to the methods described herein.

Reference throughout this specification to “one embodiment,” “certainembodiments,” “one or more embodiments” or “an embodiment” means that aparticular feature, structure, material, or characteristic described inconnection with the embodiment is included in at least one embodiment ofthe invention. Thus, the appearances of the phrases such as “in one ormore embodiments,” “in certain embodiments,” “in one embodiment” or “inan embodiment” in various places throughout this specification are notnecessarily referring to the same embodiment of the invention.Furthermore, the particular features, structures, materials, orcharacteristics may be combined in any suitable manner in one or moreembodiments. The order of description of the above method should not beconsidered limiting, and methods may use the described operations out oforder or with omissions or additions.

It is to be understood that the above description is intended to beillustrative, and not restrictive. Many other embodiments will beapparent to those of ordinary skill in the art upon reviewing the abovedescription. The scope of the invention should, therefore, be determinedwith reference to the appended claims, along with the full scope ofequivalents to which such claims are entitled.

1. A method for epitaxially forming a silicon-carbon film on amonocrystalline surface on a substrate, comprising: placing thesubstrate including the monocrystalline surface and secondary surfacesinto a process chamber; exposing the substrate to deposition gasescomprising a silicon source, a carbon source and an n-type dopant at adeposition temperature of less than about 600° C. and at a depositionpressure; and exposing the substrate to an etching gas comprisinghydrogen chloride at an etching temperature exceeding about 600° C. andbelow about 650° C. and at an etching pressure at least about 10 timesthe deposition pressure and exceeding about 100 Torr, the methodresulting in selective deposition of the silicon-carbon film in the formof heavily doped n-type epitaxy on the monocrystalline surface.
 2. Themethod of claim 1, wherein the dopant comprises one or more ofphosphorus and arsenic sources.
 3. The method of claim 2, wherein thephosphorus source comprises phosphine and the arsenic source comprisesarsine.
 4. The method of claim 2, wherein the etching gas comprises onlyhydrogen chloride.
 5. The method of claim 4, wherein the hydrogenchloride is delivered to the process chamber from a hydrogen chloridesource gas.
 6. The method of claim 4, wherein the hydrogen chloride isformed in the process chamber upon mixing hydrogen and chlorine sourcegases in the chamber.
 7. The method of claim 4, wherein the siliconsource is selected from a mixture of monosilane and a higher ordersilane.
 8. The method of claim 7, wherein the higher order silane isselected from disilane and neo-pentasilane.
 9. The method of claim 2,wherein the dopant is present in the silicon-carbon film at a level ofat least about 2×10²⁰ atoms/cm³.
 10. The method of claim 9, wherein thelevel is at least about 5×10²⁰ atoms/cm³.
 11. The method of claim 8,wherein the deposition temperature is in the range of about 575° C. andabout 600° C.
 12. The method of claim 1, wherein dichlorosilane isflowed during deposition.
 13. The method of claim 1, wherein the carbonsource comprises methylsilane.
 14. The method of claim 1, whereinhydrogen chloride is additionally flowed during deposition.
 15. Themethod of claim 1, wherein the silicon-carbon film is formed during afabrication step of a transistor manufacturing process, and the methodfurther comprises: forming a gate dielectric on the substrate; forming agate electrode on the gate dielectric; and forming source/drain regionson the substrate on opposite sides of the gate electrode and defining achannel region between the source/drain regions.
 16. The method of claim11, wherein the silicon-carbon film is formed during a fabrication stepof a transistor manufacturing process, and the method further comprises:forming a gate dielectric on the substrate; forming a gate electrode onthe gate dielectric; and forming source/drain regions on the substrateon opposite sides of the gate electrode and defining a channel regionbetween the source/drain regions.
 17. The method of claim 1, wherein theetching pressure is at least about 30 times the deposition pressure. 18.The method of claim 1 wherein the silicon-carbon film has a carbonconcentration of greater than 1%.
 19. The method of claim 18 wherein thecarbon concentration is greater than 1.5%.